In-nSiC schottky photodiode ; Fabrication and Study

In-nSiC schottky photodiode ; Fabrication and Study

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In the present work , schottky photodiode have been mode on n-type SiCby depositing of thin layer of In.electrical characteristics Charging Pad included I-V(dark and illumination ) have been investigated.Ideality factor is 1.

6 andbarrier height is 0.53 eV was calculated from I-V and Isc-Voccharacteristics, Ideality factor is 1.7 and barrier height found to be 0.

64 eV,and from optoelectronic characteristics have found sensitivity results Hydro 3 Parts showthat peak response of photodiode was 550nm.